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TST0922
SiGe-Power Amplifier for GSM 900 (Flipchip Version)
Description
The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors' Silicon-Germanium (SiGe) technology and has been designed for use in GSM 900 MHz mobile phones. With a single supply voltage of 3 V and a neglectable leackage current in power-down mode the TST0922 needs few external components and no high-side switch transistor which reduces system cost.
Features
D 34.5 dBm output power D Power Added Efficiency (PAE) 50 % D Single-supply operation at 3 V no negative voltage necessary D Current consumption in power-down mode 10 A D No external power-supply switch required D Power-ramp control D Simple output matching for maximum flexibility D Flipchip package
Block Diagram
VCC1 VCC2 GND
RFIN
Match
Match
Match
RF Out/V CC3
VCTL VCC,CTL GND
Control
16501
Figure 1. Block diagram
Ordering Information
Extended Type Number TST0922-MDD Package Flipchip Remarks
Rev. A1, 08-May-00
1 (8)
Preliminary Specification
TST0922
Pad Description
Pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 *) Symbol Function Vcc1 Supply voltage 1 RFin RF input VCCctrl Supply voltage for control VCTL Control input Vcc2 Supply voltage 2 GND Ground GND Ground GND Ground GND Ground GND Ground GND Ground GND Ground GND Ground RFout/ Vcc3 RF output/ supply voltage 3 RFout/ Vcc3 RF output/ supply voltage 3 RFout/ Vcc3 RF output/ supply voltage 3 RFout/ Vcc3 RF output/ supply voltage 3 Relative to centre of Pad 4 X-Coordinate of Pad *) (mm) 0 0 0 0 500 500 500 900 1527 1527 1527 1527 1527 2474 2474 2474 2474 Y-Coordinate of Pad *) (mm) 1500 1000 500 0 1630 891 142 1630 1630 1230 830 430 30 1391 991 591 191
Pad Location
5 1 14 10 8 9
2
15 6 11
1.58
16 3 12
4
7 13
17
0.0 3.26
Dimensions-scale division = 100 mm, for pad coordinates see Pad Decsription table.
Figure 2. Pad location
2 (8)
Rev. A1, 08-May-00
Preliminary Specification
TST0922
Absolute Maximum Ratings
All voltages are referred to GND Parameter Supply voltage Input power Gain control voltage Duty cycle for operation Burst duration Junction temperature Storage temperature Symbol VCC Pin VCTL Tburst Tj Tstg Min. Typ. Max. 5.0 13 2.2 25 1.2 +150 +150 Unit V dBm V % ms C C
0
-40
Thermal Resistance
Parameters Symbol Value tbd Unit
Operating Range
Parameter Supply voltage Symbol VCC1 VCC2 VCC3 VCC,CTL Tamb fin Min. 2.4 Typ. 3.5 Max. 4.5 Unit V
Ambient temperature Input frequency
- 25 900
+ 85
C MHz
Electrical Characteristics
Test conditions: VCC = VCC1,....., VCC3, VCC, CTL = + 3.5 V, Tamb = + 25C (see application circuit) Parameters Power Supply Supply voltage Current consumption Test Conditions Symbol VCC I Min. 2.4 Typ. 3.5 1.70 Max. 4.5 Unit V A
Current consumption (leackage current) RF Input Frequency range Input impedance * Input power Input VSWR *
Active mode Pout = 34.5 dBm, PAE = 50% Power-down mode VCTL 0.2 V
I
10
A
fin Zi Pin Pin = 0 to 12 dBm, Pout = 34.5 dBm
880
900 50 3
915 12 2:1
MHz dBm
* With external matching, see application circuit
Rev. A1, 08-May-00
3 (8)
Preliminary Specification
TST0922
Electrical Characteristics (continued)
Test conditions: VCC = VCC1,....., VCC3, VCC, CTL = + 3.5 V, Tamb = + 25C (see application circuit) Parameters RF Output Output impedance * Output power: normal conditions Test Conditions Symbol Zo Pout Min. Typ. 50 34.8 Max. Unit dBm
VCC = 3.5 V, Tamb = +25C Pin = 3 dBm, RL = RG = 50 VCC = 2.7 V, Tamb = +85C Pin = 3 dBm, RL = RG = 50 VCTL = 0.3 V VCC = 3 V, Pout = 28 dBm VCC = 3 V, Pout = 30 dBm VCC = 3 V, Pout = 33.5 dBm Tamb = -25 to + 85 C, no spurious -60 dBc Pout = 34.5 dBm, all phases, no damage
34.4
extreme conditions
Pout
32.0
33.0
dBm
Minimum output power Power added efficiency
- 20 PAE 25 35 50 10 : 1 VSWR 2fo 3fo 10 : 1 -35 -35
dBm %
Stability Load mismatch (stable, no change)
Second harmonic distortion Third harmonic distortion Noise power Pout = 34 dBm, RBW = 100 kHz f = 925 to 935 MHz f 935 MHz Rise and fall time Isolation between input and Pin = 0 to 10 dBm, output VCTL 0.2 V (power down) Power Control Control-curve slope Pout 25dBm Power-control range Vctrl = 0.3.to.2.0 V Control-voltage range Control current Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V
dBc dBc
-73 -85 tr; tf 50
- 70 - 82 0.5
dBm dBm s dB
150 VCTL ICTL 50 0.3 2.0 200
dB/V dB V A
* With external matching, see application circuit
4 (8)
Rev. A1, 08-May-00
Preliminary Specification
TST0922
Application Circuit
VCC 220nF
1nF
22pF
100pF 100pF
flip chip TST0922
T6 VCTL 22 pF 8.2 pF RFIN 900 MHz T1* VCC,CTL VCCC2 T3 T2 220nF 220nF 39pF AVX T4 56pF VCCC1 T5 T7 1/4 wavelength line 56pF RFOUT 10 pF h.Q. AVX
3.9nH
Microstrip line: FR4; Epsilon (r): 4.3; metal Cu: 3.5 mm distance 1. layer - rf ground 0.5 mm length (mm) x width (mm) T1: 2.08 x 1 + 2.6 x 0.25 T2: 4.6 x 0.5 T3: 1.5 x 0.25 + 0.93 x 0.2 T4: 11.85 x 1.0 T5: 6.7 x 0.5 + 3.14 x 0.25 T6: 68.06 x 0.5 T7: 1.34 x 0.27 + 5.74 x 1.16 T...*: -> stripline can be reduced to minimum length
Figure 3. Application circuit
Rev. A1, 08-May-00
5 (8)
Preliminary Specification
TST0922
PCB Layout
Figure 4. PCB layout
6 (8)
Rev. A1, 08-May-00
Preliminary Specification
TST0922
Package Information
Flipchip
Bump 0.3 mm 0.5 mm
Silicon
Passivation
technical drawings according to DIN specifications 16526
Rev. A1, 08-May-00
7 (8)
Preliminary Specification
TST0922
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
3.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
8 (8)
Rev. A1, 08-May-00
Preliminary Specification

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